Threshold voltage

Results: 234



#Item
51IPD30N03S4L-14  OptiMOS®-T2 Power-Transistor Product Summary V DS

IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V DS

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Source URL: www.singlechips.com

Language: English - Date: 2012-06-15 14:33:24
52Letter pubs.acs.org/NanoLett Zn-Doped p‑Type Gallium Phosphide Nanowire Photocathodes from a Surfactant-Free Solution Synthesis Chong Liu,†,§ Jianwei Sun,† Jinyao Tang,† and Peidong Yang†,‡,§,*

Letter pubs.acs.org/NanoLett Zn-Doped p‑Type Gallium Phosphide Nanowire Photocathodes from a Surfactant-Free Solution Synthesis Chong Liu,†,§ Jianwei Sun,† Jinyao Tang,† and Peidong Yang†,‡,§,*

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Source URL: www.chemistry.hku.hk

Language: English - Date: 2015-05-06 04:34:26
53A Multi-Scale Framework for Nano-electronic Devices Modeling with Application to the lunctionless Transistor Jie Peng*, Quan Chent, Ngai Wongt, LingYi Meng*, ChiYung Yam* and GuanHua Chen*  *Department of Chemistry, The

A Multi-Scale Framework for Nano-electronic Devices Modeling with Application to the lunctionless Transistor Jie Peng*, Quan Chent, Ngai Wongt, LingYi Meng*, ChiYung Yam* and GuanHua Chen* *Department of Chemistry, The

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Source URL: yangtze.hku.hk

Language: English - Date: 2015-04-21 18:02:58
54A Product Line of Diodes Incorporated APR34330C SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

A Product Line of Diodes Incorporated APR34330C SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

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Source URL: diodes.com

Language: English - Date: 2015-03-03 16:42:14
55IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 7, JULY[removed]Model Order Reduction for Multiband Quantum Transport Simulations and its Application to

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 7, JULY[removed]Model Order Reduction for Multiband Quantum Transport Simulations and its Application to

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Source URL: yangtze.hku.hk

Language: English - Date: 2013-09-27 06:35:42
56A multi-scale modeling of junctionless field-effect transistors ChiYung Yam, Jie Peng, Quan Chen, Stanislav Markov, Jun Z. Huang et al. Citation: Appl. Phys. Lett. 103, [removed]); doi: [removed] View online:

A multi-scale modeling of junctionless field-effect transistors ChiYung Yam, Jie Peng, Quan Chen, Stanislav Markov, Jun Z. Huang et al. Citation: Appl. Phys. Lett. 103, [removed]); doi: [removed] View online:

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Source URL: yangtze.hku.hk

Language: English - Date: 2013-09-27 06:35:42
57A Product Line of Diodes Incorporated APR3415 SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

A Product Line of Diodes Incorporated APR3415 SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

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Source URL: diodes.com

Language: English - Date: 2014-12-16 18:39:35
58Mitigating Parameter Variation with Dynamic Fine-Grain Body Biasing Radu Teodorescu, Jun Nakano, Abhishek Tiwari and Josep Torrellas  University of Illinois at Urbana-Champaign

Mitigating Parameter Variation with Dynamic Fine-Grain Body Biasing Radu Teodorescu, Jun Nakano, Abhishek Tiwari and Josep Torrellas University of Illinois at Urbana-Champaign

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Source URL: iacoma.cs.uiuc.edu

Language: English - Date: 2010-12-24 00:18:25
59Mitigating Parameter Variation with Dynamic Fine-Grain Body Biasing∗ Radu Teodorescu, Jun Nakano, Abhishek Tiwari and Josep Torrellas University of Illinois at Urbana-Champaign http://iacoma.cs.uiuc.edu  Abstract

Mitigating Parameter Variation with Dynamic Fine-Grain Body Biasing∗ Radu Teodorescu, Jun Nakano, Abhishek Tiwari and Josep Torrellas University of Illinois at Urbana-Champaign http://iacoma.cs.uiuc.edu Abstract

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Source URL: iacoma.cs.uiuc.edu

Language: English - Date: 2008-08-29 19:24:42
60Threshold Voltage Variation Effects on Aging-Related Hard Failure Rates Brian Greskamp Smruti R. Sarangi Josep Torrellas University of Illinois at Urbana-Champaign http://iacoma.cs.uiuc.edu

Threshold Voltage Variation Effects on Aging-Related Hard Failure Rates Brian Greskamp Smruti R. Sarangi Josep Torrellas University of Illinois at Urbana-Champaign http://iacoma.cs.uiuc.edu

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Source URL: iacoma.cs.uiuc.edu

Language: English - Date: 2007-02-17 12:35:11